?002 fairchild semiconductor corporation ruru15070, RURU15080, ruru15090, ruru150100 rev. b ruru15070, RURU15080, ruru15090, ruru150100 150a, 700v - 1000v ultrafast diodes package jedec style single lead to-218 symbol anode cathode (flange) k a features ultrafast with soft recovery . . . . . . . . . . . . . . . . . . . . . <125ns operating temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 o c reverse voltage up to . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000v avalanche energy rated planar construction applications switching power supplies power switching circuits general purpose description ruru15070, RURU15080 and ruru15090 and ruru150100 are ultrafast diodes with soft recovery characteristics (t rr < 125ns). they have low forward voltage drop and are silicon nitride passi- vated ion-implanted epitaxial planar construction. these devices are intended for use as freewheeling/clamping diodes and recti?rs in a variety of switching power supplies and other power switching applications. their low stored charge and ultrafast recovery with soft recovery characteristic minimizes ring- ing and electrical noise in many power switching circuits reducing power loss in the switching transistors. packaging availability part number package brand ruru15070 to-218 ruru15070 RURU15080 to-218 RURU15080 ruru15090 to-218 ruru15090 ruru150100 to-218 rur150100 note: when ordering, use the entire part number. absolute maximum ratings t c = +25 o c, unless otherwise speci?d ruru15070 RURU15080 ruru15090 ruru150100 units peak repetitive reverse voltage . . . . . . . . . . . . . v rrm 700 800 900 1000 v working peak reverse voltage . . . . . . . . . . . . . . v rwm 700 800 900 1000 v dc blocking voltage . . . . . . . . . . . . . . . . . . . . . . . . . . v r 700 800 900 1000 v average recti?d forward current . . . . . . . . . . . . i f(av) (t c = +65 o c) 150 150 150 150 a repetitive peak surge current . . . . . . . . . . . . . . . . i fsm (square wave, 20khz) 300 300 300 300 a nonrepetitive peak surge current . . . . . . . . . . . . . i fsm (halfwave, 1 phase, 60hz) 1500 1500 1500 1500 a maximum power dissipation . . . . . . . . . . . . . . . . . . . p d 375 375 375 375 w avalanche energy (l = 40mh) . . . . . . . . . . . . . . . . e avl 50 50 50 50 mj operating and storage temperature . . . . . . . . t stg , t j -65 to +175 -65 to +175 -65 to +175 -65 to +175 o c january 2002
?002 fairchild semiconductor corporation ruru15070, RURU15080, ruru15090, ruru150100 rev. b speci?ations ruru15070, RURU15080, ruru15090, ruru150100 electrical speci?ations t c = +25 o c, unless otherwise speci?d symbol test condition limits units ruru15070 RURU15080 ruru15090 ruru150100 min typ max min typ max min typ max min typ max v f i f = 150a, t c = +25 o c - - 1.9 - - 1.9 - - 1.9 - - 1.9 v v f i f = 150a, t c = +150 o c - - 1.7 - - 1.7 - - 1.7 - - 1.7 v i r v r = 700v, t c = +25 o c --500--------- a v r = 800v, t c = +25 o c -----500------ a v r = 900v, t c = +25 o c --------500--- a v r = 1000v, t c = +25 o c -----------500 a i r v r = 700v, t c = +150 o c --3.0--------- ma v r = 800v, t c = +150 o c -----3.0------ ma v r = 900v, t c = +150 o c --------3.0--- ma v r = 1000v, t c = +150 o c -----------3.0ma t rr i f = 1a, di f /dt = 100a/ s - - 125 - - 125 - - 125 - - 125 ns i f = 150a, di f /dt = 100a/ s - - 200 - - 200 - - 200 - - 200 ns t a i f = 150a, di f /d t = 100a/ s - 100 - - 100 - - 100 - - 100 - ns t b i f = 150a, di f /dt = 100a/ s - 75 - - 75 - - 75 - - 75 - ns r jc - - 0.4 - - 0.4 - - 0.4 - - 0.4 o c/w definitions v f = instantaneous forward voltage (pw = 300 s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time (see figure 2), summation of t a + t b . t a = time to reach peak reverse current (see figure 2). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 2). r jc = thermal resistance junction to case. e avl = controlled avalanche energy (see figures 7 and 8). pw = pulse width. d = duty cycle. figure 1. t rr test circuit figure 2. t rr waveforms and definitions c1 l loop dut q 3 r 3 q 4 q 2 r 1 r 2 -v 4 q 1 -v 2 0 0 +v 1 t 1 t 2 t 3 r 4 +v 3 v 1 amplitude controls i f v 2 amplitude controls di f /dt l 1 = self inductance of r 4 t 1 5t a(max) t 2 > t rr t 3 > 0 l 1 r 4 t a(min) 10 + l loop i f t rr t a t b 0 i rm 0.25 i rm v r v rm di f dt
?002 fairchild semiconductor corporation ruru15070, RURU15080, ruru15090, ruru150100 rev. b ruru15070, RURU15080, ruru15090, ruru150100 typical performance curves figure 3. typical forward current vs forward voltage drop figure 4. typical reverse current vs voltage figure 5. typical t rr , t a and t b curves vs forward current figure 6. current derating curve for all types figure 7. avalanche energy test circuit figure 8. avalanche current and voltage waveforms 12v q 2 q 1 12v 130 ? dut current sense + l r 1m ? v dd 130 ? i max = 1a l = 40mh r < 0.1 ? e avl = 1/2li 2 [v avl /(v avl - v dd )] q 1 & q 2 are 1000v mosfets - v dd iv t 0 t 1 t 2 i l v avl t i l
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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